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SiC Single Crystal Growth Equipment

發布時間: 2016/08/03 08:53,類別: 產品服務

 Self-developed single crystal system which can be used for the preparation of 4~6 inch conductive and semi-insulating silicon carbide single crystals.

Be composed of stainless steel single chamber furnace which has double layer water-cooling system, vacuum system, crucible pulling system, induction heating system, electric control system, intermediate frequency power supply, etc.

Can be customized and could provide the basic silicon carbide crystal growth technology support.

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